Diaz Schneider, Juan I. (2021) Sistemas neuromórficos basados en dispositivos memristores producidos por microfabricación, autoensamblados y métodos Sol Gel / Neuromorphic systems based on memristor devices produced by microfabrication, self-assembly and SolGel methods. Maestría en Ciencias Físicas, Universidad Nacional de Cuyo, Instituto Balseiro.
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Resumen en español
En pleno auge de implementación de técnicas de Machine Learning y redes neuronales dentro del área de inteligencia artificial, se han observado limitaciones de hardware en el sistema electrónico tradicional presente en la mayora de las computadoras. Por este motivo, el desarrollo de nuevas tecnologías es imprescindible para potenciar los sistemas computacionales. Una posible alternativa que se viene estudiando desde hace mas de una década es la implementación de dispositivos memristivos. El memristor es un componente electrónico que fue propuesto hace 30 años y que puede modificar su valor de resistencia mediante la historia de estímulos aplicados sobre el mismo. Sin embargo, no se habían desarrollado memristores físicos hasta 2008. Desde ese momento ha crecido notablemente el estudio de nuevos materiales en búsqueda de nuevas propiedades memristivas. En los últimos años, se han reportado propiedades memristivas en junturas formadas por materiales dieléctricos y nanohilos de plata. Estos materiales abren la posibilidad de formar sistemas con un alto numero de junturas memristivas. En el presente trabajo se estudiaron formados por redes percoladas de nanohilos de plata (AgNWs) recubiertos por polivinilpirrolidona (PVP) de manera de tener un numero elevado de junturas Ag-PVP-Ag. En primer lugar, se sintetizaron nanohilos de plata a partir del método poliol a 130 oC a partir de nitrato de plata (AgNO_3) y PVP, utilizando como agente reductor etilenglicol y cloruro férrico como aditivo. Con el objetivo de estudiar la influencia del peso molecular del PVP en la relacion de aspecto de los AgNWs, se realizaron dos síntesis: la primera utilizando PVP de 360 kg/mol y la segunda de 1.3 Mg/mol. Ambas síntesis presentaron una relación de aspecto entre el largo y el diámetro mayor a 200, obteniendo un mejor resultado en la primer síntesis. Con el objetivo de lograr una mejor distribución de los AgNWs se prepararon y estudiaron dos coloides: uno en isopropanol (IPA) y otro en una solución acuosa con poliestireno sulfonato (PSS). Las redes de AgNWs autoensambladas fueron caracterizadas estructuralmente mediante distintas técnicas. Por otro lado, se sintetizaron películas de TiO_2 por método sol-gel utilizando diluciones de tetraisopropoxido de Titanio en IPA para ser utilizadas como dieléctrico en junturas memristivas. Se diseñaron y fabricaron tres sistemas de muestras: tipo crossbar, autoensamblados y nanocompuestos. La primera de ellas estaba compuesta por una película de TiO_2 entre dos electrodos metálicos: uno de oro y el otro de plata. Los sistemas autoensamblados estaban formados por un deposito de AgNWs sobre electrodos metálicos. Los últimos se formaban por AgNWs en una matriz dieléctrica con electrodos metálicos. Para fabricarlos se utilizaron técnicas de microfabricación, depositos de los AgNWs y formación de películas de dióxido de titanio. Se emplearon dos técnicas de microfabricacion: lift-o y etching. Para realizar el deposito de los AgNWs se emplearon dos métodos: drop casting y spin coating, observando un deposito mas uniforme con el segundo. Se caracterizaron eléctricamente los dispositivos fabricados. Los dispositivos tipo crossbar presentaron un comportamiento óhmico en su estado virgen. Luego de un proceso de electroformado (cambio abrupto del comportamiento a partir de un estímulo), el sistema presento un comportamiento con diferentes estados resistivos evidenciando propiedades interesantes en las junturas metal-TiO_2-metal. Los dispositivos autoensamblados presentaban un comportamiento óhmico en su estado virgen. Se realizo un estudio de la curva de percolación eléctrica mediante la medición de la resistencia luego de sucesivos depósitos. Se obtuvo un exponente crítico de 1.32±0.04 que coincide con datos reportados en la literatura. Se observo un proceso de electroformado en el sistema autoensamblado donde se observaron comportamientos eléctricos muy dinámicos. Se identificaron seis comportamiento característicos en el sistema, entre los que se destacan la presencia de regiones de alta y baja resistencia y la presencia de multiestados resistivos. Se estudio la influencia del ambiente sobre la muestra, observándose comportamientos muy distintos entre ambientes con alta presencia de agua y ambientes secos, aumentando la conductancia con la humedad, abriendo la posibilidad de la presencia de procesos electroquímico en el comportamiento del sistema. Por otra parte, se caracterizaron los sistemas nanocompuestos formados por AgNWs y dieléctricos (PVP y TiO_2) donde se observo un cambio en el comportamiento después del deposito del material dieléctrico, pasando de un estado conductor a uno aislante.
Resumen en inglés
In the midst of the boom in the implementation of Machine Learning and neural networks techniques in the area of articial intelligence, hardware limitations have been observed in the traditional electronic system present in most computers. For this reason, the development of new technologies is essential to enhance computational systems. One possible alternative that has been studied for more than a decade is the implementation of memristive devices. The memristor is an electronic component that was proposed 30 years ago and that can modify its resistance value through the history of stimuli applied to it. However, physical memristors had not been developed until 2008. Since then, the study of new materials in search of new memristive properties has grown signicantly. In recent years, memristive properties have been reported in junctions formed by dielectric materials and silver nanowires. These materials open the possibility of forming systems with a high number of memristive junctions. In the present work, percolated networks of silver nanowires (AgNWs) coated with polyvinylpyrrolidone (PVP) were studied in order to have a high number of Ag-PVP-Ag junctions. First, silver nanowires were synthesized by the polyol method at 130 oC from silver finitrate (AgNO_3) and PVP, using ethylene glycol as reducing agent and ferric chloride as additive. In order to study the influence of the PVP molecular weight on the aspect ratio of the AgNWs, two syntheses were performed: the rst one using PVP of 360 kg/mol and the second one of 1.3 Mg/mol. Both syntheses presented an aspect ratio between length and diameter greater than 200, obtaining a better result in the rst synthesis. In order to achieve a better distribution of the AgNWs, two colloids were prepared and studied: one in isopropanol (IPA) and the other in an aqueous solution with polystyrene sulfonate (PSS). The self-assembled AgNWs networks were structurally characterized by dierent techniques. On the other hand, TiO_2 lms were synthesized by sol-gel method using dilutions of Titanium tetraisopropoxide in IPA to be used as dielectric in memristive junctions. Three sample systems were designed and fabricated: crossbar type, self-assembled and nanocomposites. The rst one was composed of a TiO_2 lm between two metal electrodes: one gold and the other silver. The self-assembled systems were formed by a deposit of AgNWs on metal electrodes. The latter were formed by AgNWs on a dielectric matrix with metal electrodes. Microfabrication techniques, AgNWs deposition and titanium dioxide lm formation were used to fabricate them. Two microfabrication techniques were employed: lift-o and etching. Two methods were used to perform the AgNWs deposition: drop casting and spin coating, observing a more uniform deposit with the second one. The fabricated devices were electrically characterized. The crossbar type devices presented an ohmic behavior in their virgin state. After an electroforming process (abrupt change of the behavior from a stimulus), the system presented a behavior with dierent resistive states showing interesting properties in the metal-TiO_2-metal junctions. The self-assembled devices presented an ohmic behavior in their virgin state. A study of the electrical percolation curve was performed by measuring the resistance after successive deposits. A critical exponent of 1.32± 0.04 was obtained, which agrees with data reported in the literature. An electroforming process was observed in the self-assembled system where highly dynamic electrical behaviors were observed. Six characteristic behaviors were identified in the system, including the presence of high and low resistance regions and the presence of resistive multistates. The influence of the environment on the sample was studied, observing very dierent behaviors between environments with high presence of water and dry environments, increasing the conductance with humidity, opening the possibility of the presence of electrochemical processes in the behavior of the system. On the other hand, nanocomposite systems formed by AgNWs and dielectrics (PVP and TiO_2) were characterized, where a change in behavior was observed after deposition of the dielectric material, going from a conductive to an insulating state.
| Tipo de objeto: | Tesis (Maestría en Ciencias Físicas) |
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| Palabras Clave: | Nanowires; Nanocables; [Memristor; Memristor; Neuromorphic; Neuromórfico; Self-assembly; Autoensamblado] |
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| Materias: | Química > Materiales |
| Divisiones: | Gcia. de área de Investigación y aplicaciones no nucleares > Instituto de Nanociencia y Nanotecnología (INN) > Dispositivos y Sensores |
| Código ID: | 1058 |
| Depositado Por: | Tamara Cárcamo |
| Depositado En: | 22 Jun 2022 14:45 |
| Última Modificación: | 22 Jun 2022 14:45 |
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