Ojeda Collado, Héctor P. (2014) Efectos de impurezas, desorden y localización en grafeno-bicapa / Effects of impurities, disorder and localization in graphene-bilayer. Maestría en Ciencias Físicas, Universidad Nacional de Cuyo, Instituto Balseiro.
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Resumen en español
En este trabajo se analizan las propiedades electrónicas del grafeno bicapa en su fase apilamiento de Bernal con impurezas de flúor a bajas concentraciones. Se considera el caso donde todas las impurezas se adsorben solamente en la capa superior suponiendo que el BLG se encuentra encima de un sustrato. Se estudian impurezas no magnéticas que por simplicidad modelamos con un solo orbital hibridizado con los estados p_z del átomo de carbono más cercano. Se analiza el efecto de las impurezas en la densidad de estados con y sin campo eléctrico aplicado perpendicular a las capas así como la localización de Anderson en diferentes regímenes estimando la longitud de localización en cada caso. El campo eléctrico abre un gap que se llena parcialmente con estados de impurezas fuertemente localizados lo cual permite ajustar el tamaño del gap y con ello controlar las propiedades electrónicas de nuestro sistema. La estructura, distribución y longitud de localización de estos estados depende de la polaridad del campo.
Resumen en inglés
We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe non-magnetic impurities as a single orbital hybridized with carbon’s p_z states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system, the field induced gap is partially filled by strongly localized impurity states. This allows us to adjust the size of the gap and thereby control the electronic properties of our system. Interestingly, the structure, distribution and localization length of these states depend on the field polarization.
| Tipo de objeto: | Tesis (Maestría en Ciencias Físicas) |
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| Palabras Clave: | Impurities; Impurezas; Graphene; Grafeno; [Anderson localization; Localización de Anderson; Bilayer graphene; Grafeno bicapa] |
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Localization and hopping conductivity in the quantum Hall regime. Phys. Rev. B., 40, 9738, 1989. 34 |
| Materias: | Física |
| Divisiones: | Gcia. de área de Investigación y aplicaciones no nucleares > Gcia. de Física > Materia condensada > Teoría de sólidos |
| Código ID: | 1102 |
| Depositado Por: | Tamara Cárcamo |
| Depositado En: | 12 Sep 2022 10:45 |
| Última Modificación: | 12 Sep 2022 10:52 |
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