Avilés Félix, Luis S. (2016) Trasporte eléctrico y magnetismo en sistemas electrodo - aislante - electrodo: hacia el desarrollo de dispositivos del tipo juntura tunel. / Electronic transport and magnetism in electrode - insulator - electrode systems: to the development of tunnel junctions devices. Tesis Doctoral en Física, Universidad Nacional de Cuyo, Instituto Balseiro.
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Resumen en español
La presente tesis es un estudio dedicado a la optimización y desarrollo de sistemas del tipo juntura túnel. La metodología utilizada para la realización de la tesis consistió, en primer lugar, en la optimización de las componentes independientes de la juntura túnel: electrodo y barrera aislante. Posteriormente se optimizaron los procesos de fabricación para el desarrollo y caracterización de dispositivos del tipo juntura túnel en su forma final. En la primera parte de la tesis se analizan detalladamente los resultados obtenidos de la caracterización eléctrica y topografica de barreras aislantes en sistemas electrodo - barrera. Los sistemas bicapas estudiados, GdBa_2Cu_3_7/SrTiO_3, Nb/Ba_0,05Sr_0,95TiO_3 y YBa_2Cu_3O_7/SrTiO_3, fueron caracterizados utilizando un microscopio de fuerza atómica en modo conductor. Se propuso un modelo fenomenológico basado en los resultados experimentales, que permitió la obtención de parámetros críticos para el desarrollo de dispositivos del tipo juntura túnel con nuevas funcionalidades. La información obtenida de la caracterización de los sistemas bicapas (homogeneidad de crecimiento, baja densidad de defectos y de pinholes) indican un muy buen control de los parámetros de crecimiento de las barreras. Por otro lado, se obtuvo un buen comportamiento aislante para espesores mayores a 2 nm sin la presencia de pinholes en la barrera. La similitud en la estequiometría de las barreras (SrTiO_3) permitió comparar los distintos sistemas estudiados en términos de conductividad eléctrica. Se verificó que el modelo fenomenológico permite comparar la conductividad eléctrica de los sistemas mediante uno de los parámetros definidos en el modelo fenomenológico (obtenido de los ajustes lineales de las curvas I(V)). De los 3 sistemas estudiados, las bicapas GdBa_2Cu_3O_7/SrTiO_3 presentaron un mayor valor de longitud de atenuación de los portadores de carga a través de la barrera y una muy baja densidad de defectos superficiales. Las bicapas YBa_2Cu_3O_7/SrTiO_3 y Nb/Ba_0,05Sr_0,95TiO_3 permitieron validar el modelo fenomenológico propuesto para el análisis de la respuesta corriente - voltaje obtenida con el microscopio de fuerza atómica en modo conductor. La segunda parte de la tesis abarca conceptos de magnetismo y microfabricación para el desarrollo de junturas túnel magnéticas. Durante la caracterización de las películas ferromagnéticas individuales de Co_90Fe_10 (CoFe) se logró aumentar valor del campo coercitivo de films de 10 nm de espesor al incrementar la temperatura de depósito. Esto se debe a un aumento del tamaño de grano de los films. El aumento de la temperatura del sustrato durante el crecimiento influye en la morfología y las propiedades magnéticas de los films de CoFe favoreciendo la formación de granos y la pérdida del eje preferencial de magnetización. Estos resultados permitieron la fabricación de sistemas Co_90Fe_10/M_gO/Co_90Fe_10 con distintas orientaciones relativas accesibles con campo magnético para el estudio del acople magnético entre los films de CoFe. La caracterización eléctrica de estos sistemas, particularmente la respuesta corriente - voltaje obtenida con el microscopio de fuerza atómica en modo conductor, indicó que las propiedades de transporte eléctrico de las junturas presentan un alto grado de reproducibilidad. Se analizó además la inuencia del sustrato utilizado en la corriente túnel que atraviesa la barrera aislante. Por otro lado, se discuten los fenómenos relacionados a la optimización de las propiedades magnéticas de electrodos ferromagnéticos para la fabricación de junturas túnel Co_90Fe_10/MgO/Co_90Fe_10 y Co_90Fe_10/MgO /Fe_20Ni_80. En particular, se estudió el acople magnético entre capas ferromagnéticas y la inuencia del sustrato utilizado para el crecimiento de las tricapas. La optimización de los electrodos magnéticos involucró el análisis de la inuencia de la presencia de un aislante entre dos capas magnéticas en el acople de los electrodos. Se logró el desacople de films de 10 nm de Co_90Fe_10 y Fe_20Ni_80 separados por un espaciador de MgO de 2 nm. Finalmente se detallan los pasos para la fabricación de una red de junturas túnel magnéticas y su caracterización eléctrica a bajas temperaturas. El sistema estudiado fue la tricapa Co_90Fe_10 (10 nm)/M_gO (8 nm)/ Fe_20Ni_80 (10 nm) crecido sobre un sustrato de M_gO. La caracterización eléctrica confirmó la buena calidad de la junturas fabricadas. Las junturas obtenidas presentaron un comportamiento altamente resistivo (~ MΩ). Las mediciones de la corriente túnel en función de la temperatura permitieron descartar la presencia de pinholes en la barrera. El transporte de los portadores de carga es por efecto túnel a través de la barrera aislante. Las curvas de conductancia diferencial permitieron calcular el valor medio de la altura de la barrera de potencial (φ = 3.1 eV) a partir del modelo de Brinkman. Los resultados obtenidos en cada uno de los capítulos se complementan y son relevantes para la optimización de junturas túnel, debido a que brindan información crítica para su correcto funcionamiento. En la presente tesis se lograron obtener los primeros avances para la fabricación de arreglos de junturas túnel que permitan el desarrollo de dispositivos.
Resumen en inglés
This thesis is focused on the optimization and characterization of tunnel junction like-devices. The methodology used in the present work, involves the independent optimization of two components: the insulating barrier and the two electrically conducting films (electrodes). Subsequently, the microfabrication process was optimized for the study of the electrical properties of an array of tunnel junctions. In the first part of the thesis, we studied the electrical and topographical properties of ultra thin insulating barriers in bilayers systems. The bilayers GdBa_2Cu_3O_7/SrTiO_3, Nb/Ba_0,05Sr_0,95TiO_3 and YBa_2Cu_3O_7/SrTiO_3 were characterized with a Conducting Atomic Force Microscope (CAFM). A phenomenological model was proposed in order to obtain critical parameters required for the development of tunnel junctions with improved functionalities, such as ferroelectric tunnel junctions and Josephson junctions. The results related to the growth homogeneity, density of defects and pinholes indicate a good control of the insulating barrier growth parameters. The high quality of the barriers allowed us to obtain a complete insulation of the electrodes for thicknesses above 1 nm without the presence of pinholes. The similar stoichiometry of the insulating spacers, allowed us to compare different systems in terms of its electrical conductivity. Applying a phenomenological model to the I(V) response of the bilayers we veriffied that the GdBa_2Cu_3O_7/SrTiO_3 system presents the larger attenuation length and a very low density of defects. Results in YBa_2Cu_3O_7/SrTiO_3 and Nb/Ba_0,05Sr_0,95TiO_3 bilayers validate the phenomenological model for the analysis of I(V) curves obtained with the CAFM. The second part of the thesis discusses magnetism and microfabrication concepts for the development of magnetic tunnel junctions. The magnetic order of the structures, the magnetic anisotropy and the interlayer exchange coupling were characterized by magnetization measurements. We achieved an increase of the coercivity of 10 nm Co_90Fe_10 (CoFe) films by increasing the substrate temperature during growth, with a very good control in the coercive field. Substrate temperature during growth of the films influences the morphology and magnetic properties of single Co_90Fe_10 films favoring grain growth and the loss of the magnetization preferential axis. These results allowed the fabrication of CoFe/M_gO/CoFe trilayers systems for the study of their electrical properties and the interlayer magnetic coupling between CoFe thin films. I(V) curves obtained with conducting atomic force microscopy of the patterned junctions at room temperature show a very high degree of reproducibility of the transport properties of the insulating barrier. A more insulting behavior was obtained for magnetic tunnel junctions grown on Si(100) substrates with a decrease of the current density (~ 600%) compared to junctions CoFe/M_gO/CoFe junctions grown on M_gO(100) substrates. On the other hand, the interlayer magnetic coupling in FM-M_gO-FM (FM = Co_90Fe_10 Fe_20Ni_80) systems is discussed considering the in uence of the substrate. We obtained ferromagnetic electrodes of Co_90Fe_10 and Fe_20Ni_80 completely decoupled down to 2 nm of the M_gO insulating barrier, for the trilayers grown on M_gO substrates. Finally, we present the fabrication process of a micro-sized magnetic tunnel junction array and the characterization of its electrical properties. We confirmed the good quality of the fabricated junctions, with a highly resistive behavior of the insulating barriers (~ MΩ). Tunneling current measurements as a function of temperature strongly suggest the homogeneity of the barrier without the presence of pinholes. The transport mechanism of the charge carriers is due to tunneling through the M_gO spacer, according to the resistance vs. temperature measurements. The barrier height was calculated from I(V) curves using Brinkman's model. The results obtained in each chapter of this thesis are complementary and relevant for the fabrication of tunnel junctions. We consider that these results represent important steps for the development of tunnel junction devices.
| Tipo de objeto: | Tesis (Tesis Doctoral en Física) |
|---|---|
| Información Adicional: | Área Temática: Materia Condensada |
| Palabras Clave: | Tunnel junctions; Junturas túnel; Electric conductivity; Conductividad eléctrica; Atomic force microscopy; Microscopía de fuerza atómica; Magnetism; Magnetismo;[ Multilayers; Multicapas; Development devices; Desarrollo de dispositivos] |
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| Materias: | Física Física > Electromagnetismo |
| Divisiones: | Gcia. de área de Investigación y aplicaciones no nucleares > Gcia. de Física > Ciencias de materiales > Resonancias magnéticas |
| Código ID: | 552 |
| Depositado Por: | USUARIO INVÁLIDO |
| Depositado En: | 30 Aug 2016 12:33 |
| Última Modificación: | 30 Aug 2016 12:44 |
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