Navarro Fernández, Henry L. (2019) Fabricación y caracterización estructural y electrónica de interfaces basadas en óxidos multifuncionales. / Fabrication and structural and electrical characterization of interfaces based on multifunctional oxides. Tesis Doctoral en Física, Universidad Nacional de Cuyo, Instituto Balseiro.
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Resumen en español
Se fabricaron y caracterizaron junturas túnel verticales con superconductores de alta temperatura crítica (T_c), utilizando electrodos de GdBa_2Cu_3O_7-δ (GBCO) de 16 nm de espesor y barreras aislantes de SrTiO_3 (STO) y BaTiO_3 (BTO) entre 1 y 4 nm. Estas fueron crecidas mediante la técnica de pulverización catódica DC y RF en sustratos de SrTiO3 (001). Mediante pasos sucesivos de litografía óptica se crearon junturas con áreas de 100, 400, y 900 µm2. Se analizaron las características de las curvas corriente – voltaje (IV) a temperatura ambiente, y el efecto Josephson a bajas temperaturas. Se optimizaron las propiedades morfológicas y superconductoras del electrodo inferior de GBCO. Se encontró que para un espesor de GBCO de 16 nm se obtienen rugosidades medias (RMS) menores que 1 nm y la transición superconductora permanece cercana a la temperatura del nitrógeno líquido (77 K). Se observó una reducción en la formación de defectos 3D cuando el electrodo es crecido sobre una capa de sacrificio de STO de 2 nm. Se estudiaron además las propiedades de las barreras aislantes crecidas sobre GBCO. Mediante microscopía de fuerza atómica conductora encontramos que la conductividad es inhomogénea y se reduce sistemáticamente al aumentar el espesor de la barrera. Los resultados se analizaron considerando efecto túnel como mecanismo de transporte. Los defectos en el electrodo GBCO comienzan a cubrirse al aumentar el espesor de la barrera. Se verificó la ferroelectricidad mediante la respuesta piezoeléctrica (PFM) para una bicapa con 4 nm de BTO. La Tc del GBCO en bicapas se suprime sistemáticamente al aumentar el espesor del aislante. Se analizaron las propiedades de transporte eléctrico en tricapas mediante el estudio de curvas IV a temperatura ambiente. Se estudiaron sistemas simétricos (GBCO/aislante/GBCO) y asimétricos (GBCO/aislante/Nb). Las curvas IV asimétricas con polarización positiva y negativa pueden obtenerse utilizando electrodos con diferentes funciones trabajo. Se obtienen curvas IV con histéresis para barreras de BTO que pueden ser asociadas a migraciones de vacancias de oxígeno. Para las tricapas de GBCO/BTO/GBCO, las curvas IV corresponden a lo esperado en las interfaces asimétricas, lo que indica que el desorden afecta de manera diferente las propiedades en la interfaz inferior (GBCO/aislante) y superior. Finalmente, los resultados de transporte eléctrico en tricapas a bajas temperaturas muestran acoplamiento Josephson para las barreras de STO y BTO ambas de 1 nm y 2 nm (con Tc ≈ 76 K) y no se observa en junturas con barreras de 3 nm y 4 nm (Tc ≈ 41 K). Para barreras de STO de 1 y 2 nm el producto IcRn (Rn: resistencia en estado normal e Ic: corriente crítica) a 12 K es ≈ 4.3 mV y 8.5 mV. Para barreras de BTO de 1 y 2 nm el producto IcRn es 1.53 mV y 7.2 mV. Las junturas exhiben patrones de modulación tipo Fraunhofer en los que la Ic no se suprime completamente con el campo magnético. Esto podría atribuirse a que la conductividad no es homogénea debido a zonas mal cubiertas por la barrera. En las JJ no se observaron efectos asociados a la ferroelectricidad.
Resumen en inglés
We fabricate and characterize the electrical properties of vertical tunnel junctions based on high temperature (Tc) superconductors and insulator perovskites. We use 16 nm thick GdBa_2Cu_3O_7-d (GBCO) electrodes and SrTiO_3 (STO) and BaTiO_3 (BTO) as insulator barriers (thicknesses between 1 and 4 nm). Samples are grown by the DC and RF sputtering on SrTiO3 (001). Tunnel junctions with areas of 100, 400, and 900 µm2 are fabricated using successive steps including optical lithography and ion milling. We perform current-voltage curves from room to low temperatures. The presence of Josephson coupling at the superconducting state is analyzed. The research is organized in several steps. Initially, we optimize the morphological and superconducting properties a GBCO film (electrode). Superficial 3D defects are reduced by including a 2 nm thick STO buffer layer. Approximately 16 nm thick GBCO films show the optimal balance between morphology and superconductivity, resulting in roughness (RMS) smaller than 1 nm and superconducting transition temperature close to liquid nitrogen (77 K). Then, we grow superconducting/insulator bilayers. The electrical transport across the insulator barriers is characterized by using a conducting atomic force microscope. The results are analyzed considering tunneling as the transport mechanism. The conductivity is inhomogeneous, and it decreases systematically with increasing barrier thickness. We verify the presence of ferroelectricity for a 4 nm thick BTO film. Electric transport versus temperature measurements show that the Tc of the GBCO is systematically suppressed from ≈ 77 K to ≈ 45 K when the insulator barrier thickness is increased from 2 nm to 4 nm. In the third step, we fabricate symmetric (GBCO/insulator/GBCO) and asymmetric (GBCO/insulator/Nb) tunnel junctions. We analyze the electric transport by performing IV curves at room temperature. The results show asymmetric IV curves (at positive and negative polarization) for tunnel junctions with electrodes with different work function. The curves for samples with BTO barriers show hysteresis, which is a signature of migration of oxygen vacancies. In addition, the IV curves for GBCO/BTO/GBCO junctions correspond to that expected for asymmetric interfaces, which suggests different properties at the bottom and top electrodes. Finally, we analyze the electrical properties at low temperatures of tunnel junctions with GBCO electrodes and STO and BTO barriers. The results show Josephson coupling for tunnel junctions with a barrier of 1 nm and 2 nm. The effect is not evidenced for 3 nm and 4 nm and no significant differences appear for STO and BTO. There are no features related to ferroelectricity on the Josephson coupling. The effect disappears at ≈ 76 K and ≈ 45 K for barriers with a thickness of 1 nm and 2 nm, respectively. For STO barriers of 1 and 2 nm, the product IcRn (Rn: resistance in the normal state and Ic: critical current) at 12 K is ≈ 4.3 mV and 8.5 mV, respectively. For BTO barriers of 1 and 2 nm, the product IcRn is ≈ 1.5 mV and ≈ 7.2 mV, respectively. The magnetic field dependence of Ic shows the typical Fraunhofer-like modulation. The Ic value does not go to zero at the nodes, which could be related to the presence of pinholes.
| Tipo de objeto: | Tesis (Tesis Doctoral en Física) |
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| Palabras Clave: | Superconductivity; Superconductividad; Sputtering; Chisporroteo; Josephson junctions; Uniones de Josephson; Tunnel junctions; Uniones de tunel; Thin films; Capas finas |
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IEEE Transactions on Applied Superconductivity. 9, 2. (1999) |
| Materias: | Física > Materia condensada |
| Divisiones: | Gcia. de área de Investigación y aplicaciones no nucleares > Gcia. de Física > Materia condensada > Bajas temperaturas |
| Código ID: | 798 |
| Depositado Por: | Tamara Cárcamo |
| Depositado En: | 12 Feb 2021 11:39 |
| Última Modificación: | 12 Feb 2021 11:39 |
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