González, Manuel (2020) Crecimiento y caracterización de heteroestructuras basadas en semiconductores III-V / Growth and characterization of III-V semiconductor heterostructures. Tesis Doctoral en Física, Universidad Nacional de Cuyo, Instituto Balseiro.
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Resumen en español
En este trabajo presentamos el crecimiento y la caracterización de muestras epitaxiales basadas en materiales semiconductores III-V crecidos por epitaxia de haces moleculares (MBE). En particular presentamos resultados de caracterización de composici ón de Al_xGa_1-xAs en el rango 0 < x < 0.5. A través de un novedoso análisis basado en el uso de un amplio rango de técnicas experimentales sobre una misma serie de muestras logramos mejorar la determinación de composición con incertezas absolutas menores al 1 %. Mostramos evidencia de que la determinación de composición basada en espectroscopía Raman presenta severas inconsistencias. Nuestros resultados muestran claramente que el espectro de dispersión Raman no está unívocamente determinado por la composición en este sistema material, como es supuesto en gran parte de la literatura. El conjunto de estos resultados provee información respecto a muchas de las discrepancias en los datos reportados en la literatura sobre este sistema material que ha sido ampliamente estudiado. La realización de este trabajo de tesis implicó la participación en el proceso de instalación y puesta en marcha de un sistema MBE, único en la Argentina. Presentamos detalles del funcionamiento del equipo, así como también algunos puntos claves para su correcta operación. En base a los resultados de composición de Al_xGa_1-xAs ya mencionados, pudimos obtener una calibración precisa que nos permite relacionar los parámetros de crecimiento de las muestras con sus propiedades ópticas y electronicas. El crecimiento de heteroestructuras semiconductoras epitaxiales permite el desarrollo de dispositivos complejos de gran interés tecnológico. Con esto en mente, crecimos y caracterizamos muestras de complejidad creciente, lo cual nos permitió avanzar signi- cativamente en el desarrollo de dispositivos, en particular láseres de cascada cuántica. Por último, presentamos el desarrollo de los procesos de postfabricación necesarios para pasar de una muestra crecida por MBE a un dispositivo funcional.
Resumen en inglés
In this work we present the growth and characterization of III-V semiconductor samples grown by molecular beam epitaxy (MBE). In particular we present characterization results of Al_xGa_1-xAs samples composition in the range 0 < x < 0.5. Through a novel analysis based in the use of a wide range of experimental techniques we were able to improve the composition determination achieving absolute uncertainties below 1%. We show evidence that the determination of Al_xGa_1-xAs composition based in Raman spectroscopy has major inconsistencies. Our results clearly show that the Raman spectrum is not univocally determined by the composition in this material system, as it is generally assumed in the literature. The combined analysis of our results gives relevant information about many of the observed discrepancies in the data reported in the literature. The realization of this thesis involved the participation in the installation and startup process of an MBE system, unique in Argentina. We present some details about how the system works as well as some key points about its correct operation. Based on the Al_xGa_1-xAs composition results we were able to get a very precise calibration that allows us to correlate the growth parameters with the optical and electronic properties of the samples. The growth of epitaxial semiconductor heterostructures allows for the development of complex devices of great technological interest. With this in mind, we have grown and characterized samples of increasing complexity. This allowed us to make signicant progress in the development of several devices, quantum cascade lasers in particular. Lastly we present the development of the postfabrication processes that are needed to go from an MBE grown sample to a functional device.
| Tipo de objeto: | Tesis (Tesis Doctoral en Física) |
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| Palabras Clave: | Epitaxy; Epitaxia; Molecular beams; Haces moleculares; [Semiconductor; Semiconductor; Characterization; Caracterización; Composition; Composición; Heterostructures; Heteroestructuras] |
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| Materias: | Física > Física de materiales |
| Código ID: | 934 |
| Depositado Por: | Marisa G. Velazco Aldao |
| Depositado En: | 07 Jul 2021 12:47 |
| Última Modificación: | 12 Jul 2021 09:10 |
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